Highly durable silicon carbide (SiC) power semiconductor TED-MOS for energy saving in electric vehicle motors

Hitachi, Ltd. today announced the development of an original energy saving power semiconductor structure, TED-MOS, using next-generation silicon carbide (SiC) material that contributes to saving energy in electric vehicles (EV). This power semiconductor is a new device using a fin-structured trench MOSFET based on the conventional DMOS-FET, a SiC transistor of power semiconductor. Using this […]

Highly durable silicon carbide (SiC) power semiconductor TED-MOS for energy saving in electric vehicle motors Read More »