Highly durable silicon carbide (SiC) power semiconductor TED-MOS for energy saving in electric vehicle motors

Hitachi, Ltd. today announced the development of an original energy saving power semiconductor structure, TED-MOS, using next-generation silicon carbide (SiC) material that contributes to saving energy in electric vehicles (EV). This power semiconductor is a new device using a fin-structured trench MOSFET based on the conventional DMOS-FET, a SiC transistor of power semiconductor. Using this new device, an energy saving of 50 percent was confirmed as the structure reduces the electric field strength, an index of durability, by 40 percent and resistance by 25 percent compared to the conventional DMOS-FET. Hitachi intends to apply this device in motor drive inverters which are a core component…
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